Investigation of Dislocation Movements and Deformation Characteristics in β-Sn Single Crystals

Abstract

ß-Sn single crystals used in this study were grown by the modified Bridgman method at 10" 4 ton-pressure and oriented by the Laue Back Reflection method. The crystals were pulled along their growth directions in an etching solution at different temperatures. The operative slip systems were found by means of formed slip bands on the crystal surfaces. In addition, the dislocation movements were observed by a method based on the etch traces at the site where a dislocation meets the crystal surface. The effect of temperature on the critical resolved shear strain, Young's modulus, yield stress, yield elongation, yield strength and fracture strain was investigated.