Temperature dependent of the current-voltage (I-V) characteristics of TaSi2/n-Si structure

Abstract

Tantalum silicide (TaSi2) thin films were deposited on n-type silicon single crystal substrates using a dual electron-gun system and with Ta and Si targets. The electrical transport properties of the TaSi2/n-Si structures were investigated by temperature-dependent current-voltage (I-V) measurements. The temperature-dependent I-V characteristics revealed that the forward conduction was determined by thermionic-emission and space-charge-limited current mechanisms at low and high voltage respectively. On the other hand, the reverse current is limited by the carrier generation process. © 2013 Elsevier Ltd.