Pulsed Power Performance of β-GaO MOSFETs at L-Band

Abstract

DC, small, and large signal results are shown under continuous wave and pulsed conditions for a \beta -Ga2O3 metal-oxide-semiconductor field-effect transistor operating at 1 and 2 GHz. The device has a maximum transducer gain, maximum output power, and peak power added efficiency of 13 dB (15 dB), 715 mW/mm (487 mW/mm), and 23.4% (21.2%), respectively at 1 GHz (2 GHz). We observe the continuous wave output power is limited to 213 mW/mm by drain dispersion likely from surface or interface traps in the gate-drain region as indicated by pulsed IV measurements. High parasitic resistances, as indicated by high knee voltages, also limit the power performance under continuous and pulsed large signal conditions.