Electronic and optical properties of InAsInP quantum dots on InP(100) and InP (311) B substrates: Theory and experiment

Abstract

We study the electronic and optical properties of InAsInP quantum dots (QDs) on (100) and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning tunneling microscopy (X-STM) are used to define the size and shape of the quantum dots for calculations. Eight-band kp calculations including strain and piezoelectric effects are then performed on such a structure for two different kinds of substrate orientation (311) B and (100). Results for several QD heights found on (311) B substrate fit well the experimental data obtained from photoluminescence measurements. On (311) B substrate, the shear and hydrostatic deformations are found to be enhanced compared to those on (100) substrate thus affecting the electronic and optical properties. The (311) B QDs are found to activate second-order (S-P channels) transitions resulting from the complete loss of symmetry due to the presence of the piezoelectric field. © 2006 The American Physical Society.