Abstract
Ion beam synthesised β-FeSi2 light emitting devices have been fabricated by ion implantation of iron into pre-grown abrupt silicon p-n junctions. Several samples were fabricated by varying the implant conditions and the junction characteristics (layer thickness and doping concentration). Light emission at ∼ 1.5 μm was obtained from all devices but the intensity decreased with increasing temperature. The electroluminescence quenching was found to depend on both the iron implant conditions and the characteristics of the p-n junction.
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Lourenço, M. A., Butler, T. M., Kewell, A. K., Gwilliam, R. M., Kirkby, K. J., & Homewood, K. P. (2001). Electroluminescence of β-FeSi2 light emitting devices. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(6 A), 4041–4044. https://doi.org/10.1143/jjap.40.4041
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