Abstract
Continuous-wave Raman amplification in silicon waveguides with negative electrical power dissipation is reported. It is shown that a p-n junction can simultaneously achieve carrier sweep-out leading to net continuous-wave gain and electrical power generation. The approach is also applicable to silicon Raman lasers and other third-order nonlinear optical devices © 2006 American Institute of Physics.
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CITATION STYLE
APA
Fathpour, S., Tsia, K. K., & Jalali, B. (2006). Energy harvesting in silicon Raman amplifiers. Applied Physics Letters, 89(6). https://doi.org/10.1063/1.2335625
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