A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

Abstract

We demonstrate a 60 nm channel length ferroelectric-gate field-effect transistor (FeFET) with thin-film transistor structure and good electrical properties. The FeFET contains three oxide thin-films: SrRuO3 (bottom gate electrode), Pb(Zr,Ti)O3 (ferroelectric), ZnO (semiconductor). The FeFET drain current-bottom gate voltage (IDS-VGS) characteristics show a high ON/OFF ratio of 105. The drain current ON/OFF ratio was about three orders of magnitude for write pulse widths as narrow as 10 ns. Although the channel length is set at 60 nm, the conductance can be changed continuously by varying the write pulse width. Good retention properties for three-level data were demonstrated. © 2011 American Institute of Physics.