Morphology-Related Functionality in Nanoarchitectured GaN

Abstract

Integrating silicon and III-nitride technologies for high-speed and large bandwidth communication demands optically interconnected active components that detect, process, and emit photons and electrons. It is imperative that multifunctional materials can enhance the performance and simplify fabrication of such devices. Spontaneously grown GaN in the nanowall network (NwN) architecture simultaneously displays unprecedented optical and electrical properties. A two-order increase in band-edge emission makes it suitable for high-brightness light-emitting diodes and laser applications. Decorating this NwN with silver nanoparticles further enhances emission through plasmonic interactions and renders it an excellent surface-enhanced Raman spectroscopy substrate for biomolecular detection. The observation of very high electron mobility (approximately 10bsup4esup cmbsup2esup/Vs) and large phase-coherence length (60 mum) is a consequence of two-dimensional (2D) electron gas formation applicable for high electron mobility transistors. Detecting ballistic transport in the nanowalls confirms proximity-induced superconductivity (lt5 K and 8 T). Charge separation properties render it a device material for UV photodetectors, photoanodes for water splitting, and thermionic field emitters.