Synthesis, Raman scattering and defects of β-Ga2O 3 nanorods

Abstract

Large yield of β-Ga2O3 nanorods with metal Ga tip were efficiently synthesized. They were deposited on surface of amorphous C fibers by decomposition of Ga2O vapor at around 1000°C, where Ga2O vapor was produced at 1360°C by a reaction between pure Ga2O3 and active carbon powders. The nanorods had diameters ranging from 10 to 100 nm and lengths of up to several tens micrometers. Twins and edge dislocations having a Burgers vector of 0.0859 Å [2.66, 3.66, 1̄] existed in the nanorods. A redshift of 4-23 cm-1 was found in the Raman scattering spectrum of nanorods compared with that of a pure Ga2O3 powder. This phenomenon was explained qualitatively in terms of the defects in the nanorods. © 2002 American Institute of Physics. © 2002 American Institute of Physics.