Abstract
Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum, and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics1 and spin-based quantum information processing 2 . This coupling can be regulated with quantum confinement in semiconductor heterostructures through band-structure engineering. Here we investigate the spin Hall effect 3 , 4 and current-induced spin polarization 5 , 6 in a two-dimensional electron gas confined in (110) AlGaAs quantum wells using Kerr rotation microscopy. In contrast to previous measurements 7-10 , the spin Hall profile shows complex structure and the current-induced spin polarization is out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. These results reveal opportunities for tuning a spin source using quantum confinement and device engineering in non-magneticmaterials.
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CITATION STYLE
Sih, V., Myers, R. C., Kato, Y. K., Lau, W. H., Gossard, A. C., & Awschalom, D. D. (2005). Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases. Nature Physics, 1(1), 31–35. https://doi.org/10.1038/nphys009
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