Effect of annealing on the in and N distribution in InGaAsN quantum wells

Abstract

We analyze the influence of annealing on compositional fluctuations in InGaAsN quantum wells by means of composition-sensitive high-resolution transmission electron microscopy and photoluminescence. In as-grown samples, we find In-concentration fluctuations of ±5% on a length scale of 20 nm in a two-dimensional grown quantum well. No indications for N concentration fluctuations are found within the limits of resolution. Annealing homogenizes the In distribution within the well and causes diffusion of N out of the quantum well. According to our compositional analysis, the blueshift in the photoluminescence can in part be attributed to reduction in N concentration inside the well. The more homogeneous In distribution leads to a reduction in linewidth and Stokes shift. © 2002 American Institute of Physics. © 2002 American Institute of Physics.