Abstract
The effects of nitrogen (N2) flow rate during high-temperature annealing were investigated for Ti/Al/Ni/Au ohmic metallisation on InAlN/GaN heterostructures. The samples annealed at 900°C for 100 s at a 30 SCCM N2 flow rate had the highest ohmic contact performance: a contact resistance of 0.12 Ω·mm, transfer length of 0.31 μm and specific contact resistivity of 3.42 × 10-7Ω·cm2.
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CITATION STYLE
APA
Geum, D. M., Shin, S., Park, M. S., & Jang, J. H. (2014). Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures. Electronics Letters, 50(21), 1545–1547. https://doi.org/10.1049/el.2014.2061
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