Binding energy of exciton complexes in self-assembled GaAs quantum dots

Abstract

We present an experimental investigation of the binding energy of excitons confined in GaAs/AlGaAs self-assembled quantum dots. The peculiar epitaxial growth technique, the droplet epitaxy, allows the realization of strain free nanostructures. We show that the change in the quantum dot height is the main factor ruling the systematic evolution in the photoluminescence spectrum of single quantum dots. The changes in the level energy are interpreted as a balance between the attractive/repulsive Coulomb interaction field and correlation effects. © 2011 American Institute of Physics.