Study on optical properties and internal quantum efficiency measurement of GaN-based green LEDs

Abstract

In this paper, the optical properties of GaN-based green light emitting diode (LED) are investigated and the internal quantum efficiency (IQE) values are measured by temperature dependent photoluminescence (TDPL) and power dependent photoluminescence (PDPL) methods. The "S-shaped" shift of peak wavelength measured at different temperature disappears gradually and the spectra broadening can be observed with increasing excitation power. The IQE calculation results of TDPL, which use the integrated intensity measured at low temperature as unity, can be modified by PDPL in order to acquire more accurate IQE values.