Comparison of trimethylgallium and triethylgallium for the growth of GaN

Abstract

GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction. Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration. © 1997 American Institute of Physics.