Inuence of composition on the structure and optoelectronic properties of PbxIn25-xSe75 thin films

Abstract

Pbx In25-x Se75 thin films with 2 compositions were prepared by thermal evaporation. The surface topography of these films was studied by transmission electron microscope. The optical reectance and transmittance were studied in order to determine the optical parameters such as optical energy gap, refractive index, extinction coefficient, dielectric loss, and dielectric tangent loss for these films. A single oscillator theory equation was applied for these films in order to determine both dispersion energy and oscillating energy, and the ratio of free carrier concentration/e ective mass (N/m*) was determined optically. It was found that change in the composition of these films a ects strongly all their optical and dielectric results. © TÜBITAK.