Stark shifts and transition probabilities in Si III and Si IV spectra

Abstract

Stark shifts of nine doubly charged (Si III) and six triply charged (Si IV) silicon ion spectral lines have been measured in a linear, low-pressure, pulsed arc operated in O2 and SF6 discharges. Si III Stark shift values have been also calculated using the semiclassical perturbation formalism (SCPF) for electrons, protons and helium ions as perturbers. Transition probabilities of the spontaneous emission (Einstein's A values) of nine Si III transitions have been obtained using the relative line intensity ratio (RLIR) method, not applied before in Si III spectrum, and, also, calculated using the Coulomb approximation method. The measured Si IV shift and some calculated Si III shift values present the first published data in this field.