Electron quantum interference in epitaxial antiferromagnetic NiO thin films

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Abstract

The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.

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Xu, J., Lou, F., Jia, M., Chen, G., Zhou, C., Li, Q., … Wu, Y. (2020). Electron quantum interference in epitaxial antiferromagnetic NiO thin films. AIP Advances, 10(4). https://doi.org/10.1063/1.5129772

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