Abstract
The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.
Cite
CITATION STYLE
Xu, J., Lou, F., Jia, M., Chen, G., Zhou, C., Li, Q., … Wu, Y. (2020). Electron quantum interference in epitaxial antiferromagnetic NiO thin films. AIP Advances, 10(4). https://doi.org/10.1063/1.5129772
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.