Quantum Point Contact Transistor and ballistic field-effect transistors

Abstract

We report the experimental results and theoretical understanding of the Quantum Point Contact Transistor - a fully ballistic one-dimensional (1D) Field-Effect Transistor (FET). Experimentally obtained voltage gain greater than 1 in our Quantum-Point-Contact transistors at 4.2 K can be explained with the help of an analytical modeling based on the Landauer-Büttiker approach in mesosopic physics: the lowest 1D subband and the band gap play the key role in increasing its transconductance, especially by reducing its output conductance, and thus achieving a voltage gain higher than 1. This work provides a general basis for devising future ballistic FETs and the quantum limits found in this work may be used to estimate normalized transconductance and channel resistance in future two-dimensional (2D) ballistic FETs. © Published under licence by IOP Publishing Ltd.