This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiN x :H and SiN x :H(C)) and non-hydrogenated (SiN x and SiN x (C)) forms. The emphasis is on emerging trends and innovations in these SiN x material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiN x and its SiN x (C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.
Kaloyeros, A. E., Jové, F. A., Goff, J., & Arkles, B. (2017). Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications. ECS Journal of Solid State Science and Technology, 6(10), P691–P714. https://doi.org/10.1149/2.0011710jss