The role of deep centers in formation of dosimetric properties of wide-gap materials

Abstract

The direct and indirect methods of experimental detection of deep traps in wide-gap insulators are described. The experimentally observed effects of influence of deep traps with different nature on luminescent and dosimetric properties of materials are analyzed. It is established that the most wide-spread and well-studied effects are the sensitization and superlinearity of dose response. They are interpreted in terms of the kinetic model of competitive electron traps. Taking into account the temperature dependence of capture probability by deep traps in this model allows one to explain some new effects associated with luminescence thermal quenching. The luminescence model of Al2O3:C single crystal is described. In this model the temperature dependence of competitive interaction between the main and deep traps is caused by thermal ionization of excited states of F-centers.