Synthesis of new BLnZT nanostructured ferroelectric thin films

Abstract

A novel synthesis method was employed to obtain a new family of lead-free compounds with the general formula: Ba1-yLn2y/3Ti 0.91Zr0.09O3 (Ln= lanthanide element). The thin films were deposited by RF-magnetron sputtering under high-oxygen pressure on different substrates at 873 K. The crystalline phases were studied via x-ray diffraction, showing the 001 epitaxial reflections corresponding to perovskite single-phase compounds. The films revealed high homogeneity and stoichiometries corresponding to BLnZT (Ln=Nd, La). Deposited thin films showed a smooth surface. Ferroelectric measurements through hysteresis curves were obtained in Ba0.90La0.0670.033Ti0.91Zr 0.09O9O3, capacitor structures showing clear ferroelectric behavior with Pr, Ps and Ec of 11.9 μC/cm2, 36.8 μC/cm2and 38.6 kV/cm, respectively.