Journal ArticleOPEN ACCESS

Segregation mechanism of arsenic dopants at grain boundaries in silicon

  • Ohno Y
  • Yokoi T
  • Shimizu Y
  • et al.
Science and Technology of Advanced Materials: Methods (2021) 1(1) 169-180
DOI: 10.1080/27660400.2021.1969701
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Abstract

1. Silicon (Si) crystals in most electronic devices, including field effect transistors (FETs) and sensors, are doped with III or V group elemental impurities in order to achieve specific electrica...

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APA

Ohno, Y., Yokoi, T., Shimizu, Y., Ren, J., Inoue, K., Nagai, Y., … Yoshida, H. (2021). Segregation mechanism of arsenic dopants at grain boundaries in silicon. Science and Technology of Advanced Materials: Methods, 1(1), 169–180. https://doi.org/10.1080/27660400.2021.1969701

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