Advancement in screen printed fire through silver paste metallisation of polysilicon based passivating contacts

Abstract

We have metallised n+ polysilicon passivated layer structures deposited by Low Pressure Chemical Vapor Deposition (LPCVD) with silver pastes. We analysed recombination at the metal contacts by photoluminescence imaging of metallised lifetime samples and found for the best paste, metal semiconductor recombination current density values (J0met) below 70 fA/cm2, with contact resistivity below 2 mΩcm2. To our knowledge, these are among the lowest values reported so far for full size M2 wafers with 150 nm thin polysilicon layer and wet chemical thin oxide. We also studied the effect of the peak firing temperature on the J0met and contact resistivity in this work. Further, we performed Scanning Electron Microscopy to further understand the silver polysilicon interface.