Resonant tunnelling diode photodetector operating at near-infrared wavelengths with high responsivity

Abstract

Resonant tunnelling diode photodetectors with a 600 nm In0.53Ga0.47As absorption layer were fabricated by molecular beam epitaxy. The current-voltage characteristics of devices with different mesa diameters were tested and the negative differential resistance was observed in all devices. The responsivity of the detector was measured to be 4.19 × 105 A/W at 77 K and 1.92 × 104 A/W at room temperature under incident light with a power of 3.1 nW.