Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2on GaAs

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Abstract

The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here, we present the first molecular beam epitaxy growth of a NiTe22D transition-metal dichalcogenide. Importantly, the growth is realized on a nearly lattice-matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunneling microscopy. Surface coverage and atomic-scale order are evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that the NiTe2layers are metallic, with a Hall concentration of 1020to 1023cm-3, depending on the growth conditions.

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Seredyński, B., Ogorzałek, Z., Zajkowska, W., Bożek, R., Tokarczyk, M., Suffczyński, J., … Pacuski, W. (2021). Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2on GaAs. Crystal Growth and Design, 21(10), 5773–5779. https://doi.org/10.1021/acs.cgd.1c00673

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