Maskless deposition of gold patterns on silicon

Abstract

We demonstrate that electrochemical metal deposition selectivity may be attained by intentionally introducing defects in a semiconductor surface. The electrolyte–semiconductor surface shows a similar characteristic to a p–n junction, which when reverse biased into (Schottky) breakdown, electrochemical reactions become possible. To achieve electrochemical deposition of metals, a p-type semiconductor must be used. The defects are patterned by focused ion beam silicon ion implantation. Gold was selectively deposited only on the defective surface from a gold containing KCN electrolyte.