Abstract
Since graphene was successfully exfoliated, intercalation has been reviewed from bulk materials to two-dimensional counterparts. Here 1T phase Cu-TaS2 was successfully prepared via intercalating Cu into 2D layered TaS2 based on a solution method, which cannot damage the crystal structure of the target material and can realize uniform intercalation with a large amount of dopants. The electrical conductivity of 2D TaS2 intercalated by Cu has an obvious increase compared with 2D TaS2. Considering the peculiar metal-insulator transitions (MITs) of TaS2, our work may provide new opportunities for future superconductor and CDW-based memory devices.
Cite
CITATION STYLE
Liu, R., Wang, C., Li, Y., Xie, Y., Chen, Q., Chen, Z., & Liu, Q. (2017). Intercalating copper into layered TaS2 van der Waals gaps. RSC Advances, 7(74), 46699–46703. https://doi.org/10.1039/c7ra08630j
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