Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks

4Citations
Citations of this article
27Readers
Mendeley users who have this article in their library.

Abstract

We report on lasing of non-polar GaN quantum dots which are integrated into novel cubic AlN microdisks. Optical spectroscopy of freestanding microdisks at low temperature (∼10 K) revealed distinct whispering gallery modes with quality factors up to Q ∼3000 in the high energy range around ∼4 eV of microdisks with a diameter of 4 μm. Furthermore, we obtained S-shaped curves of the integral mode intensity, accompanied by a significant linewidth narrowing in power dependent micro-photoluminescence experiments. The spontaneous emission coupling factors were determined to β = 0.26 and β = 0.58 with respect to the radial order of the resonator modes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cite

CITATION STYLE

APA

Bürger, M., Callsen, G., Kure, T., Hoffmann, A., Pawlis, A., Reuter, D., & As, D. J. (2014). Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(3–4), 790–793. https://doi.org/10.1002/pssc.201300411

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free