Progress in performance development of room temperature direct terahertz detectors

Abstract

In this paper issues, associated with the development of THz direct detectors and focal plane arrays in the last decade are discussed. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, CMOS-based detectors, microbolometers, and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Special attention has been paid to the development of detectors made of two-dimensional materials. Their performance is comparable to that presented for classical terahertz detectors. It is shown that applications of nanoscale materials and devices, in particular, made of two-dimensional materials, open the door for further performance improvement of THz detectors operated at room temperature.