Abstract
A GeSn metal-semiconductor-metal (MSM) photodetector is fabricated on a silicon-on-insulator (SOI) waveguide by rapid melt growth method. The Sn concentration of the GeSn photodetector is 2 % and shows a larger photo-responsivity by comparing with a pure Ge photodetector at long wavelength. The dark current is 3.7e-7 A at 5.4 V and the operation speed can be as high as 6.2 GHz.
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Tseng, C. K., Chiu, C. H., Yen, S. C., Hsieh, K. C., Na, N., & Lee, M. C. (2015). GeSn waveguide photodetectors fabricated by rapid-melt-growth method. In 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/ISNE.2015.7132044
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