Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy (RSC Advances (2017) 7 (3336–3342) DOI: 10.1039/C6RA26876E)

Marc Courté; Sandeep G. Surya; Ramesh Thamankar; Chao Shen; V. Ramgopal Rao; Subodh G. Mhaisalkar; Denis Fichou

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Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy (RSC Advances (2017) 7 (3336–3342) DOI: 10.1039/C6RA26876E)

RSC Advances

DOI: 10.1039/c7ra90012k

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Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336-3342.

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Courté, M., Surya, S. G., Thamankar, R., Shen, C., Rao, V. R., Mhaisalkar, S. G., & Fichou, D. (2017). Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy (RSC Advances (2017) 7 (3336–3342) DOI: 10.1039/C6RA26876E). RSC Advances. Royal Society of Chemistry. https://doi.org/10.1039/c7ra90012k

Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy (RSC Advances (2017) 7 (3336–3342) DOI: 10.1039/C6RA26876E)

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