Properties of plasma-polysiloxane deposited by PECVD

Abstract

Polysiloxane thin films of about 30-5000 nm thickness have been deposited from organometallic molecules using a plasma enhanced chemical vapour deposition (PECVD) process. Their deposition kinetics, some physicochemical and electrical properties have been investigated. FTIR spectroscopy analysis revealed that the -Si-O-Si-siloxane groups were the film backbones and the organic bonds were sensitive to process parameters. Complex permittivity measurements of the deposited films have shown that dielectric properties were improved at high substrate temperatures and RF power. Dielectric losses and relative permittivity were respectively in the 10-3-2×10-2 and 2-3.5 ranges. © 1993.