Synthesis of SnO 2-ZnO core-shell nanowires and their optoelectronic properties

Abstract

Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO 2-ZnO core-shell nanowires is 100nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO 2-ZnO core-shell nanowires (ALD: 200 cycles) is 925Ω, which is much lower than pure SnO 2 nanowires (3.6 × 10 6Ω). The result of UV light test shows that the recovery time of SnO 2-ZnO core-shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO 2 nanowires (938 seconds). These results demonstrated that the SnO 2-ZnO core-shell nanowires have potential application as UV photodetectors with high photon-sensing properties. © 2012 Ko-Ying Pan et al.