Novel photoacid generators

Abstract

A new class of compounds which are non-ionic and halogen-free photo acid generators applicable for g-line, i-line and DUV photoresists is reported. The compounds exhibit high solubility in PGMEA, thermal stability in a phenolic polymer matrix up to 140 °C, storage stability below 40 °C more than 1 year, red-shifted absorption profile reaching to 490 nm, effective acid generation in terms of quantum yield and high sensitivity in resist formulations with various exposure wavelength. An application example of the new photoacid generator for chemically amplified negative resist is presented.