Van der Waals coherent epitaxy of GaN and InGaN/GaN multi-quantum-well via a graphene inserted layer

Abstract

GaN-based films grown on sp 3 -bonded single-crystalline substrates can maintain the coherent growth character. However, exfoliating III-nitride films from these substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. The sp 2 -bonded two-dimensional (2D) materials exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, so the GaN epilayer grown on 2D materials can be transferred onto foreign substrates with ease. In this paper, graphene is used as the inserted layer (IL) on freestanding GaN substrate and the van der Waals coherent epitaxy of GaN-based single-crystalline films on such graphene/GaN templates is investigated. Density functional theory computations are performed to probe the transmission of crystallographic information of wurtzite GaN through the graphene IL. The appropriate layer numbers of graphene IL and GaN growth temperature are optimized to demonstrate the coherent epitaxy character. Both theoretical and experimental results support that the coherent epitaxy of GaN can only be achieved by using a monolayer graphene IL, and the crystalline quality of optimized GaN film can reach the same level of that grown directly on GaN freestanding substrates.