Opto-electronic properties of fluorine doped tin oxide films deposited by nebulized spray pyrolysis method

Abstract

Transparent and conductive fluorine doped tin oxide thin films (FTO) were deposited on to thoroughly cleaned glass substrates by nebulized spray pyrolysis technique using di-hydrated tin (II) chloride (SnCl 2.2H 2 O) and ammonium fluoride (NH 4 F) as the source of tin (Sn) and fluorine (F), respectively. The fluorine concentration was varied from 0.005-0.04 M in the steps of 0.05. The substrate temperature was constantly maintained at 350°C for all depositions. The influence of dopant concentration on the optoelectronic properties of FTO thin films was investigated using X-Ray Diffraction (XRD) analysis, Scanning Electron Micrographs (SEM), Energy Dispersive Analysis of X-rays (EDAX) spectra, optical analysis and electrical measurements.