Enhanced electrical properties of atomic layer deposited La2 O3 thin films with embedded ZrO2 nanocrystals

Abstract

The deposition of alternating (sub)monolayers of lanthanum oxide (La 2 O3) and zirconium oxide (ZrO2) by atomic layer deposition has been carried out to create uniform LayZr 1-y Ox mixed oxide films. However, spontaneous nucleation of ZrO2 nanocrystals occurs during deposition within an amorphous La2O3 matrix. Such ZrO2 embedded La 2O3 films exhibit low leakage currents in combination with higher electric breakdown fields and higher dielectric permittivities than the pure lanthanum and zirconium oxide films. The possible scenarios that account for this enhanced electric performance of these nanocluster-embedded dielectric thin films are explained. © 2008 American Institute of Physics.