Offset stable piezoresistive high-temperature pressure sensors based on silicon

Abstract

The exploitation of new application fields and the drive to size reduction even in highly stable pressure sensing systems makes the extension of the operating temperature range of the microelectromechanical sensors (MEMS) essential. For this reason a silicon-based pressure sensor with an application temperature ranging up to 300 °C and the associated manufacturing technology was developed. With special design and manufacturing approaches mounting stress-insensitive sensors with high linearity, excellent offset stability, low hysteresis and low sensitivity changes over the entire temperature range were developed. At the moment, the sensors are tested till 300 °C at wafer level and between 135 and 210 °C as a first-level package.