Measurement of Si 311 defect properties using x-ray scattering

Abstract

The 311 defects play a crucial role in the damage healing and dopant redistribution which occurs during the annealing of an ion-beam-doped Si. Using grazing-incidence x-ray scattering we measure the type, length, and width of the 311 defects created with different annealing times. In particular, we show that measurements around (1.3 1.3 0) in reciprocal space can be used to determine all these quantities without the need for pristine reference samples. The results agree well with computer simulation predictions and transmission-electron-microscopy measurements, demonstrating that x-ray methods can be used as a nondestructive, rapid method to characterize the 311 defects. © 2005 American Institute of Physics.