Plasma-enhanced atomic layer deposition of GaP/GaN digital alloys

Abstract

This article is concerned with plasma-enhanced atomic layer deposition of GaPN in the form of a GaP/GaN digital alloy at 380 C on a silicon substrate. It was found that the GaP/GaN digital alloy has a uniform structure without significant mechanical stresses and defects at the interface with the substrate. EDX and Raman scattering study confirmed deposition of a monolithic GaPN crystalline material with a total nitrogen content of 7.8%.