Cylindrical silicon nanowire transistor modeling based on Adaptive Neuro-Fuzzy Inference System (ANFIS)

Abstract

In this paper, Adaptive Neuro-Fuzzy Inference System (ANFIS) is applied for modeling and simulation of DC characteristic of cylindrical Silicon Nanowire Transistor (SNWT). Device Geometry parameters, terminal voltages, temperature and output current were selected as the main factors of modeling. The results obtained are compared with numerical method and a good match has been observed between them, which represent accuracy of model. Finally, we imported the ANFIS model as a voltage controlled current source in a circuit simulator like HSPICE and simulated a SNWT inverter and common- source amplifier by this model.