Capacitance transient analysis of configurationally bistable defects in semiconductors

Abstract

Configurationally bistable defects can exist in either of two different structural configurations for the same charge state. Each configuration exhibits distinct optical and electronic properties. Here a framework is presented for the use and interpretation of deep level capacitance transient spectroscopy measurements in the study of these defects. Examples are presented for the MFe center in InP, a bistable A-center-related defect in Si, and the EL2 center in GaAs.