Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy

Abstract

Surfaces of GaN films have been investigated with photoemission spectroscopy. The measured valence band is in good agreement with band structure calculations and correlates well with tunneling luminescence measurements performed on the same samples. The effect of N depletion on band structure is explored, clarifying disagreements in previous photoemission measurements. © 1996 American Institute of Physics.