Curvature-induced metallization of double-walled semiconducting zigzag carbon nanotubes

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Abstract

We report total-energy electronic-structure calculations that provide energetics and electronic structures of double-walled carbon nanotubes consisting of semiconducting ([Formula presented]) nanotubes. We find that optimum spacing between the walls of the nanotubes is slightly larger than the interlayer spacing of the graphite. We also find that the electronic structures of the double-walled nanotubes with the inner (7,0) nanotube are metallic with multicarrier characters in which electrons and holes exist on inner and outer nanotubes, respectively. Interwall spacing and curvature difference are found to be essential for the electron states around the Fermi level. © 2003 The American Physical Society.

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Okada, S., & Oshiyama, A. (2003). Curvature-induced metallization of double-walled semiconducting zigzag carbon nanotubes. Physical Review Letters, 91(21). https://doi.org/10.1103/PhysRevLett.91.216801

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