Electrodeposition of gallium in the presence of NH4Cl in an ionic liquid: hints for GaN formation

Abstract

Group III–V semiconductors are important in the production of a variety of optoelectronic devices. At present, these semiconductors are synthesized by high vacuum techniques. Here we report on the electrochemical deposition of GaN which seems to form in quite a thin layer from NH4Cl and GaCl3 in an ionic liquid. © 2014 The Royal Society of Chemistry.