Near Infrared Random Lasing in Multilayer MoS2

Abstract

We demonstrated room temperature near infrared (NIR) region random lasing (RL) (800-950 nm), with a threshold of nearly 500 μW, in ∼200 nm thick MoS2/Au nanoparticles (NPs)/ZnO heterostructures using photoluminescence spectroscopy. The RL in the above system arises mainly due to the following three reasons: (1) enhanced multiple scattering because of Au/ZnO disordered structure, (2) exciton-plasmon coupling because of Au NPs, and (3) enhanced charge transfer from ZnO to thick MoS2 flakes. RL has recently attracted tremendous interest because of its wide applications in the field of telecommunication, spectroscopy, and specifically in biomedical tissue imaging. This work provides new dimensions toward realization of low power on-chip NIR random lasers made up of biocompatible materials.