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Response to "comment on 'Contact mechanisms and design principles for alloyed Ohmic contacts to n-GaN '" [J. Appl. Phys. 95, 7940 (2004))

Journal of Applied Physics
DOI: 10.1063/1.2353258
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Abstract

Response to Yow-Jon Lee's comments on our article [J. Appl. Phys. 95, 7940 (2004)] describing the relative influence of thermionic emission and tunneling on the low contact resistivity of annealed Tin-GaN contacts under the influence of band gap narrowing andor image force lowering has been presented. © 2006 American Institute of Physics.

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Noor Mohammad, S. (2006). Response to "comment on ’Contact mechanisms and design principles for alloyed Ohmic contacts to n-GaN ’ " [J. Appl. Phys. 95, 7940 (2004)). Journal of Applied Physics. https://doi.org/10.1063/1.2353258

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