Abstract
A memristance enhancement method using an external voltage source is proposed. The proposed method is suitable for circuit implementation due to the tunability of the external voltage source. Numerical results show a memristance enhancement and an enlarged hysteresis eye-openness of current-voltage characteristics. © The Institution of Engineering and Technology 2013.
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CITATION STYLE
APA
Tanaka, H., Tadokoro, Y., & Iizuka, H. (2013). Memristance enhancement by external voltage source. Electronics Letters, 49(23), 1446–1448. https://doi.org/10.1049/el.2013.2311
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