INITIAL REACTIONS AT THE INTERFACE OF Pt AND AMORPHOUS SILICON.

Abstract

The initial reactions at the interface of Pt on a-Si:H are probed by interference enhanced Raman scattering, TEM, and Auger, and the atomic structural changes are correlated with electrical properties determined from current-voltage and internal photoemission measurements. It is shown that a disordered Pt-Si intermixed phase of less than 20 A thick exists at the interface immediately after deposition, and this phase grows thicker with annealing to 150 degree C. Annealing at 200 degree C causes the nucleation of crystalline silicide phases. The Schottky diodes exhibit rectification over greater than ten orders of magnitude of current density. Initially, the as-deposited diodes exhibit an ideality parameter of approximately 1. 11. Subsequently, the value drops to 1. 04 as the silicide develops. Internal photoemission results indicate deviations from expected behavior.